DMTH8003SPS Green 80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features I Rated to +175C Ideal for High Ambient Temperature D BV R Max DSS DS(ON) T = +25C Environments C (Note 9) 100% Unclamped Inductive Switching Test in Production 3.9m V = 10V 100A GS Ensures More Reliable and Robust End Application 80V 6m V = 6V 100A Thermally Efficient Package Cooler Running Applications GS High Conversion Efficiency Low R Minimizes On-State Losses DS(ON) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 5060-8 (Type K) (R , yet maintain superior switching performance, making it ideal DS(ON)) Case Material: Molded Plastic, Green Molding Compound. for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Switching Terminal Finish Matte Tin Annealed over Copper Leadframe. Synchronous Rectification Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Weight: 0.097 grams (Approximate) PowerDI5060-8 (Type K) S D S D S D D G Pin1 Top View Bottom View Top View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH8003SPS-13 PowerDI5060-8 (Type K) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH8003SPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 80 V DSS Gate-Source Voltage V 20 V GSS T = +25C C 100 Continuous Drain Current, V = 10V (Note 6) (Note 9) I A GS D T = +100C C 100 Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 300 A I DM Continuous Body Diode Forward Current (Note 6) 95 A T = +25C I C S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 300 A I SM Avalanche Current, L = 3mH (Note 8) 15.8 A I AS Avalanche Energy, L = 3mH (Note 8) E 375.4 mJ AS Avalanche Current, L = 0.1mH I 65 A AS Avalanche Energy, L = 0.1mH E 211.4 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.9 W P D Thermal Resistance, Junction to Ambient (Note 5) 51 C/W R JA Total Power Dissipation (Note 6) 125 W P D Thermal Resistance, Junction to Case (Note 6) 1.2 C/W R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 80 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 64V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 2 4 V V V = V , I = 250A GS(TH) DS GS D 3.1 3.9 m V = 10V, I = 30A GS D Static Drain-Source On-Resistance R DS(ON) 4.1 6 m V = 6V, I = 30A GS D Diode Forward Voltage V 1.3 V V = 0V, I = 30A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 8,952 iss V = 40V, V = 0V, DS GS Output Capacitance C 533 pF oss f = 1MHz Reverse Transfer Capacitance C 26 rss Gate Resistance 0.85 Rg VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge 124.3 Q g Gate-Source Charge 24.3 nC Q V = 40V, I = 30A, V = 10V gs DS D GS Gate-Drain Charge 35.7 Q gd Turn-On Delay Time 12.6 t D(ON) Turn-On Rise Time 24.4 t V = 40V, V = 10V, R DD GS ns Turn-Off Delay Time t 47.9 I = 30A, R = 2.5 D(OFF) D g Turn-Off Fall Time t 20.9 F Reverse Recovery Time t 56.2 ns RR I = 50A, di/dt = 100A/s F Reverse Recovery Charge Q 118.7 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. 2 of 7 DMTH8003SPS February 2018 Diodes Incorporated www.diodes.com Document number: DS39685 Rev. 4 - 2 ADVANCED INFORMATION