Product Information

STW70N60DM2

STW70N60DM2 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 600V; 42A; 446W; TO247
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.6571 ea
Line Total: USD 6.66

216 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
204 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

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STW70N60DM2
STMicroelectronics

1 : USD 6.6571
10 : USD 5.7208
30 : USD 5.1511
100 : USD 4.6721

Read More Specifications

     
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Drain Current
Gate-Source Voltage
Drain-Source Voltage
On-State Resistance
Power Dissipation
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Additional Infomation About Product

STW70N60DM2 Datasheet N-channel 600 V, 37 m typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Features V R max. I P Order code DS DS(on) D TOT STW70N60DM2 600 V 42 m 66 A 446 W Fast-recovery body diode 3 Extremely low gate charge and input capacitance 2 1 Low on-resistance 100% avalanche tested TO-247 Extremely high dv/dt ruggedness Zener-protected D(2, TAB) Applications Switching applications G(1) Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- S(3) AM01475V1 recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STW70N60DM2 Product summary Order code STW70N60DM2 Marking 70N60DM2 Package TO-247 Packing Tube DS10558 - Rev 5 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW70N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 66 case I A D Drain current (continuous) at T = 100 C 42 case (1) I Drain current (pulsed) 264 A DM P Total power dissipation at T = 25 C 446 W TOT case (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 66 A, di/dt=900 A/s V peak < V , V = 400 V. SD DS (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.28 thj-case C/W R Thermal resistance junction-ambient 50 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 10 A AR (2) E Single pulse avalanche energy 1500 mJ AS 1. Pulse width limited by T . JMAX 2. Starting T = 25 C, I = I , V = 50 V J D AR DD DS10558 - Rev 5 page 2/13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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