Product Information

STW70N60DM6-4

STW70N60DM6-4 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V, 36 mOhm typ 62 A MDmesh DM6 Power MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 17.2756 ea
Line Total: USD 17.28

19 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
19 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STW70N60DM6-4
STMicroelectronics

1 : USD 16.783
2 : USD 11.57
4 : USD 10.933

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

The STW70N60DM6-4 is a MOSFET N-channel 600 V, 36 mOhm typ 62 A MDmesh DM6 Power MOSFET manufactured by STMicroelectronics. This device is designed to be used in a variety of applications such as high frequency switching and power control. It has an operating temperature range of -55° C to +175° C and is pin-compatible with earlier MOSFETs. This Power MOSFET features very low on-state and switching losses, high speed switching, and fast body diode recovery. Its superior thermal performance allows operation at higher frequencies, while its optional external gate families provide improved gate-source breakdown, improved dv/dt immunity, and improved shoot-through immunity.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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