Product Information

STW69N65M5-4

STW69N65M5-4 electronic component of STMicroelectronics

Datasheet
MOSFET N-CH 650V 0.037Ohm 58A

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 7.969 ea
Line Total: USD 31.88

0 - Global Stock
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STW69N65M5-4
STMicroelectronics

1 : USD 17.3
10 : USD 15.2676
100 : USD 12.8945
500 : USD 11.4705
1000 : USD 10.5212

0 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 4
Multiples : 1

Stock Image

STW69N65M5-4
STMicroelectronics

4 : USD 7.969
10 : USD 7.969
30 : USD 7.969
125 : USD 7.969
300 : USD 7.969

0 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STW69N65M5-4
STMicroelectronics

1 : USD 14.8978
10 : USD 13.1523

0 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STW69N65M5-4
STMicroelectronics

1 : USD 18.5085
2 : USD 12.5651
4 : USD 11.8731
600 : USD 11.4359

0 - WHS 5


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3
Multiples : 1

Stock Image

STW69N65M5-4
STMicroelectronics

3 : USD 15.2497
10 : USD 14.1202

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
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STW69N65M5-4 N-channel 650 V, 0.037 typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet - production data Features R DS(on) Order code V T I DS Jmax D max STW69N65M5-4 710 V 0.045 58 A Higher V rating DS 4 3 Higher dv/dt capability 2 1 Excellent switching performance thanks to the extra driving source pin TO247-4 Easy to drive 100% avalanche tested Figure 1. Internal schematic diagram Applications Drain(1) High efficiency switching applications: Servers PV inverters Telecom infrastructure Multi kW battery chargers Gate(4) Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined Driver Power with STMicroelectronics well-known source(3) source(2) AM10177v1 PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STW69N65M5-4 69N65M5 TO247-4 Tube January 2014 DocID024925 Rev 2 1/13 This is information on a product in full production. www.st.comContents STW69N65M5-4 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 13 2/13 DocID024925 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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