STW60NM50N STMicroelectronics

STW60NM50N N-channel 500 V, 0.035 , 68 A, MDmesh II Power MOSFET in a TO-247 package Datasheet - production data Features Order code V ( T )R I DSS jmax DS(on) max D STW60NM50N 550 V <0.043 68 A 100% avalanche tested Low input capacitance and gate charge 3 2 Low gate input resistance 1 TO-247 Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 0 Y Table 1. Device summary Order codes Marking Packages Packaging STW60NM50N 60NM50N TO-247 Tube April 2013 DocID023157 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents STW60NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID023157 Rev 2