Product Information

STW65N80K5

STW65N80K5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 800 V, 0.07 O typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 12.5997 ea
Line Total: USD 7559.82

582 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 600  Multiples: 600
Pack Size: 600

 More Buying Options & Price Grid(s)

Availability Price Quantity
582 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 600
Multiples : 600

Stock Image

STW65N80K5
STMicroelectronics

600 : USD 12.5997

27 - WHS 2


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STW65N80K5
STMicroelectronics

1 : USD 18.8174
10 : USD 18.1264
30 : USD 16.928
100 : USD 15.8826

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STW65N80K5 N-channel 800 V, 0.07 typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STW65N80K5 800 V 0.08 46 A 446 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) 3 Ultra low gate charge 2 100% avalanche tested 1 Zener-protected TO-247 Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STW65N80K5 65N80K5 TO-247 Tube October 2015 DocID027717 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STW65N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 package information ............................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID027717 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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