Product Information

STGF30H60DF

STGF30H60DF electronic component of STMicroelectronics

Datasheet
IGBT Transistors 600V 30A High Speed Trench Gate IGBT

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STGF30H60DF
STMicroelectronics

1 : USD 2.9299
50 : USD 2.6048
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

STGF30H60DF
STMicroelectronics

1 : USD 2.7997
10 : USD 2.377
100 : USD 2.0582
250 : USD 1.9543
500 : USD 1.7533
1000 : USD 1.607
2000 : USD 1.607
5000 : USD 1.5845
10000 : USD 1.4947
N/A

Obsolete
0 - WHS 3

MOQ : 8
Multiples : 1

Stock Image

STGF30H60DF
STMicroelectronics

8 : USD 5.0986
10 : USD 3.4531
50 : USD 2.8438
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STGP30H60DF Datasheet Trench gate field-stop 600 V, 30 A high speed IGBT Features High speed switching TAB Tight parameters distribution Safe paralleling Low thermal resistance 3 2 1 Short circuit rated TO-220 Ultrafast soft recovery antiparallel diode Applications Inverter UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of high frequency converters. Furthermore, the positive V temperature coefficient and the tight parameter CE(sat) distribution result in safer paralleling operation. Product status link STGP30H60DF Product summary Order code STGP30H60DF Marking GP30H60DF Package TO-220 Packing Tube DS8709 - Rev 4 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.STGP30H60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 60 C I A C Continuous collector current at T = 100 C 30 C (1) I Pulsed collector current 120 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 60 C I A F Continuous forward current at T = 100 C 30 C (1) I Pulsed forward current 120 A FP P Total power dissipation at T = 25 C 260 W TOT C T Storage temperature range - 55 to 150 C stg T Operating junction temperature range - 55 to 175 C J 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.58 R C/W thJC Thermal resistance junction-case diode 2.5 R Thermal resistance junction-ambient 62.5 C/W thJA DS8709 - Rev 4 page 2/14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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