Product Information

STGF30M65DF2

STGF30M65DF2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT M series 650 V 30 A low loss

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.949 ea
Line Total: USD 2.95

9 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STGF30M65DF2
STMicroelectronics

1 : USD 2.2008
10 : USD 2.1026
30 : USD 2.043
100 : USD 1.9928

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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The STGF30M65DF2 is an IGBT (Insulated Gate Bipolar Transistor) M series device manufactured by STMicroelectronics, with 650 Volt blocking voltage and 30 Amp continuous current rating. It is a Trench Gate Field-Stop IGBT, which means it uses trenches in its structure to confine the electric field from the gate to the source contact, providing low gate threshold voltage and avoiding gate oxide breakdown. This device features low losses, which helps to increase overall efficiency, and it is suitable for use in power switching circuits in medium- and high-voltage applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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