Product Information

STD130N6F7

STD130N6F7 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.7232 ea
Line Total: USD 2.72

2425 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2425 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STD130N6F7
STMicroelectronics

1 : USD 1.0591
10 : USD 0.8915
100 : USD 0.8388
500 : USD 0.8146
1000 : USD 0.7931
2500 : USD 0.7773
5000 : USD 0.7773
12500 : USD 0.7773

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Numofpackaging
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STD130N6F7 N-channel 60 V, 4.2 m typ., 80 A STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD130N6F7 60 V 5.0 m 80 A 134 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Figure 1: Internal schematic diagram Applications Switching applications D(2, TAB) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- G(1) state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STD130N6F7 130N6F7 DPAK Tape and reel October 2016 DocID028788 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STD130N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 DPAK package information ............................................................... 9 5 Revision history ............................................................................ 12 2/13 DocID028788 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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