Product Information

STD134N4F7AG

STD134N4F7AG electronic component of STMicroelectronics

Datasheet
MOSFET Automotive-grade N-channel 40 V, 2.5 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.7249 ea
Line Total: USD 1812.25

0 - Global Stock
MOQ: 2500  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 2500
Multiples : 1

Stock Image

STD134N4F7AG
STMicroelectronics

2500 : USD 1.4106
3000 : USD 1.3965
4000 : USD 1.3825
5000 : USD 1.3688
6000 : USD 1.355
10000 : USD 1.3415
20000 : USD 1.3281
25000 : USD 1.3148
50000 : USD 1.3017

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STD134N4F7AG
STMicroelectronics

1 : USD 4.5049
10 : USD 1.6259
25 : USD 1.5327

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STD134N4F7AG Automotive-grade N-channel 40 V, 2.5 m typ., 80 A STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STD134N4F7AG 40 V 3.5 m 80 A 134 W AEC-Q101 qualified Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity Figure 1: Internal schematic diagram High avalanche ruggedness Applications D(2, TAB) Switching applications Description This N-channel Power MOSFET utilizes G(1) STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more S(3) efficient switching. AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STD134N4F7AG 134N4F7 DPAK Tape and reel December 2016 DocID030109 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STD134N4F7AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) packing information ............................................... 13 5 Revision history ............................................................................ 15 2/16 DocID030109 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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