Product Information

STD13N65M2

STD13N65M2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6456 ea
Line Total: USD 0.65

1 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

STD13N65M2
STMicroelectronics

1 : USD 0.6456

4 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

STD13N65M2
STMicroelectronics

1 : USD 1.6815
10 : USD 1.4869
30 : USD 1.3709
100 : USD 1.2532
500 : USD 1.1469
1000 : USD 1.1221

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STD13N65M2 N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet production data Features Order code V R max I DS DS(on) D TAB STD13N65M2 650 V 0.43 10 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile oss 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Figure 1. Internal schematic diagram Description , TAB This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking Package Packaging STD13N65M2 13N65M2 DPAK Tape and reel December 2014 DocID027324 Rev 1 1/16 This is information on a product in full production. www.st.comContents STD13N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 2/16 DocID027324 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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