Product Information

STD13NM60N

STD13NM60N electronic component of STMicroelectronics

Datasheet
mosfet n trench 600v 11a (tc) 5v @ 250ua 380 m @ 5.5a,10v to-252-2 (dpak) rohs

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9257 ea
Line Total: USD 1.93

68 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4850 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 2500
Multiples : 2500

Stock Image

STD13NM60N
STMicroelectronics

2500 : USD 2.2381

68 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

STD13NM60N
STMicroelectronics

1 : USD 1.9257
10 : USD 1.6534
30 : USD 1.4818
100 : USD 1.3081
500 : USD 1.2292
1000 : USD 1.1957

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
LoadingGif

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The STD13NM60N is an N-channel MOSFET produced by STMicroelectronics. It has a maximum drain-to-source voltage of 600V and a maximum drain current of 11A (TC). It has a gate-to-source voltage of 5V (at a gate current of 250uA), a drain-source on-resistance of 380m (at a drain current of 5.5A), and is available in TO-252-2 (DPAK) or TO-220 (FP) packages. The STD13NM60N is manufactured utilizing STMicroelectronics' advanced Trench process, and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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