Product Information

STD155N3H6

STD155N3H6 electronic component of STMicroelectronics

Datasheet
MOSFET Nchannel 30 V 2.5 m Ohm80A DPAK STripFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9745 ea
Line Total: USD 0.97

4384 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4384 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

STD155N3H6
STMicroelectronics

1 : USD 0.9745

4384 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 8
Multiples : 1

Stock Image

STD155N3H6
STMicroelectronics

8 : USD 0.9745

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 m , 80 A, DPAK, DPAK STripFET VI DeepGATE Power MOSFET Features Order codes V R max I DSS DS(on) D (1) STB155N3H6 30 V < 3 m 80 A (1) STD155N3H6 30 V < 3 m 80 A 1. Limited by wire bonding 3 3 1 1 R * Q industry benchmark DS(on) g DPAK DPAK Extremely low on-resistance R DS(on) High avalanche ruggedness Application Switching applications Automotive Figure 1. Internal schematic diagram Description D (TAB or 2) These devices are 30 V N-channel Power MOSFETs realized using ST s proprietary STripFET VI technology. The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. G(1) S(3) AM01474v1 Table 1. Device summary Order codes Marking Package Packaging STB155N3H6 DPAK 155N3H6 Tape and reel STD155N3H6 DPAK May 2011 Doc ID 018793 Rev 2 1/ www.st.com 18 Contents STB155N3H6, STD155N3H6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 18 2/ Doc ID 018793 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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