Product Information

STD16N65M2

STD16N65M2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 1.5048 ea
Line Total: USD 3762

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2500
Multiples : 2500

Stock Image

STD16N65M2
STMicroelectronics

2500 : USD 1.225
5000 : USD 1.1818

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2500
Multiples : 2500

Stock Image

STD16N65M2
STMicroelectronics

2500 : USD 1.5048

0 - WHS 3


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STD16N65M2
STMicroelectronics

1 : USD 6.372
10 : USD 2.3004
25 : USD 2.1708
100 : USD 1.8468
500 : USD 1.5228
1000 : USD 1.2636
2500 : USD 1.2528

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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STD16N65M2 N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK package Datasheet production data Features Order code V T R max I DS Jmax DS(on) D TAB STD16N65M2 710 V 0.36 11 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile oss 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Figure 1. Internal schematic diagram Description , TAB This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking Package Packaging STD16N65M2 16N65M2 DPAK Tape and reel October 2014 DocID027076 Rev 1 1/17 This is information on a product in full production. www.st.comContents STD16N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 16 2/17 DocID027076 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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