RGCL80TK60 665000VV 3 400AA Fie Field Sld Stotop Trep Trench nch IGIGBTBT Data Sheet lOutline TO-3PFM V 600V CES I 21A C(100C) V 1.4V I =40A CE(sat) (Typ.) C P 57W (1)(2) (3) D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Soft Switching (2) Collector 3) Pb - free Lead Plating RoHS Compliant (1) (3) Emitter (3) lApplications lPackaging Specifications Partial Switching PFC Packaging Tube Discharge Circuit Reel Size (mm) - Brake for Inverter Tape Width (mm) - Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGCL80TK60 lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 600 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 35 A C C Collector Current T = 100C I 21 A C C *1 Pulsed Collector Current 160 A I CP T = 25C P 57 W C D Power Dissipation T = 100C P 28 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 1/9Data Sheet RGCL80TK60 lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 2.62 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 600 - - V CES C GE Voltage Collector Cut - off Current I V = 600V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage Current I V = 30V, V = 0V - - nA 200 GES GE CE Gate - Emitter Threshold V V = 5V, I = 30.0mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 40A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.4 1.8 V CE(sat) j Voltage T = 175C - 1.6 - j www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 2/9