Product Information

RGTH40TK65DGC11

RGTH40TK65DGC11 electronic component of ROHM

Datasheet
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.588 ea
Line Total: USD 3.59

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 13.006
10 : USD 11.259
100 : USD 9.2249
500 : USD 7.853
1000 : USD 6.6944

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 450
Multiples : 450
450 : USD 4.62

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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RGTH40TK65D 650V 20A Field Stop Trench IGBT Data Sheet lOutline TO-3PFM V 650V CES I 14A C(100C) V 1.6V I =20A CE(sat) (Typ.) C P 56W (1)(2) (3) D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) High Speed Switching (1) Gate (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Tube lApplications PFC Reel Size (mm) - UPS Tape Width (mm) - Type Power Conditioner Basic Ordering Unit (pcs) 450 IH Packing Code C11 Marking RGTH40TK65D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 23 A C C Collector Current T = 100C I 14 A C C *1 Pulsed Collector Current 80 A I CP T = 25C I 26 A C F Diode Forward Current T = 100C I 15 A C F *1 Diode Pulsed Forward Current 80 A I FP T = 25C P 56 W C D Power Dissipation T = 100C P 28 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 1/11Data Sheet RGTH40TK65D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 2.64 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 3.93 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 13.3mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 20A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.6 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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ROHM Semiconductor

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