RGTH80TK65GC11 ROHM

RGTH80TK65 650V 40A Field Stop Trench IGBT Data Sheet lOutline TO-3PFM V 650V CES I 19A C(100C) V 1.6V I =40A CE(sat) (Typ.) C P 66W (1)(2) (3) D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating RoHS Compliant (3) lApplications lPackaging Specifications PFC Packaging Tube UPS Reel Size (mm) - Power Conditioner Tape Width (mm) - Type IH Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGTH80TK65 lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 31 A C C Collector Current T = 100C I 19 A C C *1 Pulsed Collector Current 160 A I CP T = 25C P 66 W C D Power Dissipation T = 100C P 33 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 1/9Data Sheet RGTH80TK65 lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 2.27 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage Current I V = 30V, V = 0V - - nA 200 GES GE CE Gate - Emitter Threshold V V = 5V, I = 27.6mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 40A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.6 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 2/9