X-On Electronics has gained recognition as a prominent supplier of RGTV00TS65DGC11 igbt transistors across the USA, India, Europe, Australia, and various other global locations. RGTV00TS65DGC11 igbt transistors are a product manufactured by ROHM. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

RGTV00TS65DGC11

RGTV00TS65DGC11 electronic component of ROHM
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Part No.RGTV00TS65DGC11
Manufacturer: ROHM
Category:IGBT Transistors
Description: IGBT Transistors 650V 50A TO-247N Field Stp Trnch IGBT
Datasheet: RGTV00TS65DGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.1333 ea
Line Total: USD 8.13

Availability - 436
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
432 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 6.8885
10 : USD 6.003
25 : USD 5.5085
100 : USD 5.1405
250 : USD 4.4735
900 : USD 4.2205
5400 : USD 4.14

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Product Type
Subcategory
Hts Code
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We proudly offer the RGTV00TS65DGC11 IGBT Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RGTV00TS65DGC11 IGBT Transistors.

RGTV00TS65D 650V 50A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 50A C(100C) V 1.5V CE(sat) (Typ.) P 276W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching & Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 2s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Tube Applications Solar Inverter Reel Size (mm) - UPS Tape Width (mm) - Type Welding Basic Ordering Unit (pcs) 450 IH Packing Code C11 RGTV00TS65D PFC Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES = 25C I T 95 A C C Collector Current T = 100C I 50 A C C *1 200 A Pulsed Collector Current I CP T = 25C I 84 A C F Diode Forward Current T = 100C I 50 A C F *1 Diode Pulsed Forward Current 200 A I FP T = 25C P 276 W C D Power Dissipation T = 100C P 138 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 1/11Datasheet RGTV00TS65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.54 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 0.80 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V -- 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 34.3mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 50A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.5 1.9 V CE(sat) j Voltage T = 175C - 1.85 - j www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.05 - Rev.A 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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