RGTVX2TS65
Datasheet
650V 60A Field Stop Trench IGBT
lOutline
TO-247N
V 650V
CES
I
60A
C (100C)
V
1.5V
CE(sat) (Typ.)
P
319W
D (1) (2)(3)
lFeatures lInner Circuit
1) Low Collector - Emitter Saturation Voltage
(2)
(1) Gate
2) High Speed Switching & Low Switching Loss
(2) Collector
(3) Emitter
3) Short Circuit Withstand Time 2s
(1)
4) Pb - free Lead Plating ; RoHS Compliant
(3)
lApplication lPackaging Specifications
Solar Inverter Packaging Tube
UPS Reel Size (mm) -
Welding Tape Width (mm) -
Type
IH Basic Ordering Unit (pcs) 450
PFC Packing Code C11
Marking RGTVX2TS65
lAbsolute Maximum Ratings (at T = 25C unless otherwise specified)
C
Parameter Symbol Value Unit
V
Collector - Emitter Voltage 650 V
CES
V
Gate - Emitter Voltage 30 V
GES
T = 25C I
111 A
C C
Collector Current
T = 100C I 60 A
C C
*1
Pulsed Collector Current I 240 A
CP
T = 25C P 319 W
C D
Power Dissipation
T = 100C P
159 W
C D
T
Operating Junction Temperature -40 to +175 C
j
Storage Temperature T -55 to +175 C
stg
*1 Pulse width limited by T
jmax.
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2021.02 - Rev.B
2021 ROHM Co., Ltd. All rights reserved. 1/9Datasheet
RGTVX2TS65
lThermal Resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
R
Thermal Resistance IGBT Junction - Case - - 0.47 C/W
(j-c)
lIGBT Electrical Characteristics (at T = 25C unless otherwise specified)
j
Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Collector - Emitter Breakdown
BV I = 10A, V = 0V
650 - - V
CES C GE
Voltage
Collector Cut - off Current I V = 650V, V = 0V - - 10 A
CES CE GE
Gate - Emitter Leakage
I V = 30V, V = 0V
- - 200 nA
GES GE CE
Current
Gate - Emitter Threshold
V V = 5V, I = 41.9mA
5.0 6.0 7.0 V
GE(th) CE C
Voltage
I = 60A, V = 15V,
C GE
Collector - Emitter Saturation
V T = 25C
- 1.5 1.9 V
CE(sat) j
Voltage
T = 175C - 1.85 -
j
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2021.02 - Rev.B
2021 ROHM Co., Ltd. All rights reserved. 2/9