RGTH50TS65DGC11 ROHM

RGTH50TS65D 650V 25A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 25A C(100C) V 1.6V CE(sat) (Typ.) P 174W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector *1 3) Low Switching Loss & Soft Switching (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating RoHS Compliant Packaging Specifications Packaging Tube Applications PFC Reel Size (mm) - UPS Tape Width (mm) - Type Power Conditioner Basic Ordering Unit (pcs) 450 IH Packing code C11 RGTH50TS65D Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES = 25C I T 50 A C C Collector Current T = 100C I 25 A C C *1 Pulsed Collector Current 100 A I CP T = 25C I 35 A C F Diode Forward Current T = 100C I 20 A C F *1 Diode Pulsed Forward Current 100 A I FP T = 25C P 174 W C D Power Dissipation T = 100C P 87 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 1/11Data Sheet RGTH50TS65D Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.86 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 2.28 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 - - V CES C GE Voltage I V = 650V, V = 0V Collector Cut - off Current -- 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V -- 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 17.5mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 25A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.6 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 2/11