Product Information

RGPZ10BM40FHTL

RGPZ10BM40FHTL electronic component of ROHM

Datasheet
IGBT Transistors 430V 20A 1.6V Vce Ignition IGBT

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.4599 ea
Line Total: USD 2.46

4850 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4476 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 1.9665
10 : USD 1.6445
100 : USD 1.4375
250 : USD 1.3455
500 : USD 1.2305
1000 : USD 1.0695
2500 : USD 1.0638
5000 : USD 1.0568
10000 : USD 1.0316

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Qualification
Package / Case
Packaging
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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RGPZ10BM40FH 430V 20A Ignition IGBT Datasheet Outline TO-252 BV 43030V CES (2) I 20A C (1) V 1.6V CE(sat) (Typ.) (3) E 250mJ AS Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Self-Clamped Inductive Switching Energy (2) Collector (1) 3) Built in Gate-Emitter Protection Diode (3) Emitter 4) Qualified to AEC-Q101 5) Pb - free Lead Plating RoHS Compliant (3) Packaging Specifications Packaging Taping Reel Size (mm) 330 Applications Ignition Coil Driver Circuits Tape Width (mm) 16 Type Solenoid Driver Circuits Basic Ordering Unit (pcs) 2,500 Packing Code TL RGPZ10BM40 Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 460 V CES Emitter-Collector Voltage (V = 0V) V 25 V GE EC Gate - Emitter Voltage V V 10 GE I Collector Current 20 A C T = 25C E mJ 250 j AS Avalanche Energy (Single Pulse) *2 T = 150C 150 mJ E j AS P Power Dissipation 107 W D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.A 1/8Data Sheet RGPZ10BM40FH Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal Resistance Junction - Case R - - 1.40 C/W (j-c) Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. I = 2mA, V = 0V C GE Collector - Emitter Breakdown BV T = 25C 400 430 460 V CES j Voltage *2 T = 40 to 175C 395 - 465 V j Emitter - Collector Breakdown BV I = 10mA, V = 0V 25 35 - V EC C GE Voltage Gate - Emitter Breakdown BV I = 5mA, V = 0V - 17 V 12 GES G CE Voltage V = 300V, V = 0V CE GE I T = 25C Collector Cut - off Current -- 7 A CES j *2 - - 100 A T = 150C j Gate - Emitter Leakage Current I V = 10V, V = 0V -- A 15 GES GE CE V = 5V, I = 10mA CE C Gate - Emitter Threshold V T = 25C 1.3 1.7 2.1 V GE(th) j Voltage T = 150C - 1.3 - V j I = 10A, V = 5V C GE Collector - Emitter Saturation V T = 25C - 1.60 2.00 V CE(sat) j Voltage T = 150C - 1.80 - V j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.A 2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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RHE
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ROHM Semicon
ROHM Semiconductor

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