Product Information

RGCL60TK60DGC11

RGCL60TK60DGC11 electronic component of ROHM

Datasheet
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.183 ea
Line Total: USD 6.18

10 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
20 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 5.267
10 : USD 4.4735
25 : USD 4.416
100 : USD 3.7835
250 : USD 3.6455
450 : USD 3.404
900 : USD 2.99

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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RGCL60TK60D 665000VV 3 300AA Fie Field Sld Stotop Trep Trench nch IGIGBTBT Data Sheet lOutline TO-3PFM V 600V CES I 18A C(100C) V 1.4V I =30A CE(sat) (Typ.) C P 54W (1)(2) (3) D lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Soft Switching (2) Collector *1 3) Built in Very Fast & Soft Recovery FRD (3) Emitter (1) (RFN - Series) *1 Built in FRD (3) 4) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Tube lApplications Partial Switching PFC Reel Size (mm) - Discharge Circuit Tape Width (mm) - Type Brake for Inverter Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGCL60TK60D lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 600 V CES Gate - Emitter Voltage V V 30 GES T = 25C I 30 A C C Collector Current T = 100C I 18 A C C *1 Pulsed Collector Current 120 A I CP T = 25C I 26 A C F Diode Forward Current T = 100C I 15 A C F *1 Diode Pulsed Forward Current 100 A I FP T = 25C P 54 W C D Power Dissipation T = 100C P 27 W C D Operating Junction Temperature T C -40 to +175 j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 1/11Data Sheet RGCL60TK60D lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 2.77 C/W (j-c) R Thermal Resistance Diode Junction - Case - - 3.93 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 600 - - V CES C GE Voltage I V = 600V, V = 0V Collector Cut - off Current - - 10 A CES CE GE I Gate - Emitter Leakage Current V = 30V, V = 0V - - 200 nA GES GE CE Gate - Emitter Threshold V V = 5V, I = 18.9mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 30A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.4 1.8 V CE(sat) j Voltage T = 175C - 1.6 - j www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.01 - Rev.A 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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ROHM Semiconductor

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