Product Information

QS6M4TR

Hot QS6M4TR electronic component of ROHM

Datasheet
Mosfet Array N and P-Channel 30V, 20V 1.5A 1.25W Surface Mount TSMT6 (SC-95)
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

230: USD 0.1666 ea
Line Total: USD 38.32

13049 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 230  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2866 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 5
Multiples : 5

Stock Image

QS6M4TR
ROHM

5 : USD 0.3086
50 : USD 0.2491
150 : USD 0.2234
500 : USD 0.1916
3000 : USD 0.1692
6000 : USD 0.1606

27312 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

QS6M4TR
ROHM

1 : USD 0.5543
10 : USD 0.4853
100 : USD 0.3427
500 : USD 0.2944
1000 : USD 0.2576
3000 : USD 0.2277
6000 : USD 0.2277
9000 : USD 0.2197

2910 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 272
Multiples : 1

Stock Image

QS6M4TR
ROHM

272 : USD 0.3393
500 : USD 0.3325

13049 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 230
Multiples : 1

Stock Image

QS6M4TR
ROHM

230 : USD 0.1666
500 : USD 0.1508
1000 : USD 0.1439
3000 : USD 0.1399
6000 : USD 0.1343

1620 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 272
Multiples : 1

Stock Image

QS6M4TR
ROHM

272 : USD 0.3425

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 z Dimensions (Unit : mm) z Structure Silicon P-channel MOSFET TSMT6 Silicon N-channel MOSFET 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) z Features 1) The QS6M4 combines Pch MOSFET with a Nch 0~0.1 (1) (2) (3) MOSFET in a single TSMT6 package. 1pin mark 2) Low on-state resistance with a fast switching. 0.16 0.4 3) Low voltage drive (2.5V). Each lead has same dimensions Abbreviated symbol : M04 z Applications Load switch, inverter z Packaging specifications z Equivalent circuit (6) (5) (4) Package Taping Type Code TR 1 Basic ordering unit (pieces) 3000 QS6M4 2 2 (1) Tr1 (Nch) Source 1 z Absolute maximum ratings (Ta=25C) (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain Limits (1) (2) (3) Parameter Symbol Unit (4) Tr2 (Pch) Source Nchannel Pchannel (5) Tr2 (Pch) Gate 1 ESD PROTECTION DIODE Drain-source voltage V 30 20 V DSS (6) Tr1 (Nch) Drain 2 BODY DIODE Gate-source voltage VGSS 12 12 V Continuous ID 1.5 1.5 A Drain current 1 Pulsed IDP 6.0 6.0 A Source current Continuous IS 0.8 0.75 A 1 (Body diode) I 6.0 6.0 A Pulsed SP 1.25 W / TOTAL 2 Total power dissipation PD 0.9 W / ELEMENT Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit 100 C / W / TOTAL Channel to ambient Rth (ch-a) 139 C / W / ELEMENT Mounted on a ceramic board Rev.B 1/5 1.6 2.8 0.3~0.6QS6M4 Transistors z Electrical characteristics (Ta=25C) <Tr1. N-ch MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V / VDS=0V Drain-source breakdown voltage V 30 VI =1mA / V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS=30V / VGS=0V Gate threshold voltage VGS (th) 0.5 1.5 V VDS=10V / ID=1mA 170 230 I =1.5A / V =4.5V D GS Static drain-source on-state RDS (on) 180 245 m ID=1.5A / VGS=4.0V resistance 260 360 ID=1.0A / VGS=2.5V Forward transfer admittance Y 1.0 SV =10V / I =1.0A fs DS D Input capacitance Ciss 80 pF VDS=10V Output capacitance Coss 25 pF VGS=0V Reverse transfer capacitance C 15 pF f=1MHz rss Turn-on delay time td (on) 7 ns ID=1A, VDD 15V Rise time tr 18 ns VGS=4.5V Turn-off delay time t 15 ns R =15 / R =10 d (off) L G Fall time tf 15 ns Total gate charge Qg 1.6 nC VDD 15V RL=10 Gate-source charge Q 0.5 nC V =4.5V R =10 gs GS G Gate-drain charge Qgd0.9 nC ID=1.5A Pulsed z Body diode characteristics (Source-Drain) <Tr1. N-ch MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V 1.2 V I =3.2A / V =0V SD S GS Pulsed Rev.B 2/5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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