Product Information

QS8J1TR

QS8J1TR electronic component of ROHM

Datasheet
MOSFET P Chan-12V-4.5A Mid-PowerSwitching
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5674 ea
Line Total: USD 0.57

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

QS8J1TR
ROHM

1 : USD 0.5674
10 : USD 0.5616
125 : USD 0.5207
750 : USD 0.427
1500 : USD 0.3978
2500 : USD 0.392

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

QS8J1TR
ROHM

1 : USD 1.1178
10 : USD 1.0005
100 : USD 0.7521
500 : USD 0.6371
1000 : USD 0.5347
3000 : USD 0.5037
6000 : USD 0.5026
9000 : USD 0.4956

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Additional Infomation About Product

QS8J1 Transistors 1.5V Drive Pch+Pch MOSFET QS8J1 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) z Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. (1) (2) (3) (4) z Applications Each lead has same dimensions Abbreviated symbol : J01 Switching z Packaging specifications z Inner circuit Package Taping (8) (7) (6) (5) Type Code TR 3000 Basic ordering unit (pieces) QS8J1 2 2 (1) Tr1 Source (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain (7) Tr1 Drain 1 ESD PROTECTION DIODE z Absolute maximum ratings (Ta=25C) (8) Tr1 Drain 2 BODY DIODE <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage V 12 V DSS Gate-source voltage VGSS 10 V Continuous ID 4.5 A Drain current 1 Pulsed I 18 A DP Source current Continuous IS 1 A 1 (Body diode) Pulsed ISP 18 A 1.5 W / TOTAL 2 Total power dissipation PD 1.25 W / ELEMENT Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board z Thermal resistance Parameter Symbol Limits Unit 83.3 C/W / TOTAL Channel to ambient Rth(ch-a) 100 C/W / ELEMENT Mounted on a ceramic board. 1/5 QS8J1 Transistors z Electrical characteristics (Ta=25C) <It is the same characteristics for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 12 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 12V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 6V, ID= 1mA 21 29 m ID= 4.5A, VGS= 4.5V Static drain-source on-state 27 38 m I = 2.2A, V = 2.5V D GS RDS (on) resistance 36 54 m ID= 2.2A, VGS= 1.8V 49 98 m ID= 0.9A, VGS= 1.5V Forward transfer admittance Y 6.5 SV = 6V, I = 4.5A fs DS D Input capacitance Ciss 2450 pF VDS= 6V Output capacitance Coss 320 pF VGS=0V Reverse transfer capacitance Crss 290 pF f=1MHz Turn-on delay time td (on) 12 ns VDD 6V VGS= 4.5V Rise time tr 75 ns ID= 2.2A Turn-off delay time td (off) 390 ns RL 2.7 Fall time tf 215 ns RG=10 VDD 6V Total gate charge Qg 31 nC VGS= 4.5V Gate-source charge Qgs 4.5 nC ID= 4.5A Gate-drain charge Qgd4.0 nC RL 1.3 / RG=10 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 4.5A, V =0V S GS Pulsed 2/5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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