CPC3730 350V N-Channel Depletion-Mode FET INTEGRATED CIRCUITS DIVISION V / R I (min) Package Description (BR)DSX DS(on) DSS V (max) The CPC3730 is an N-channel, depletion mode, field (BR)DGX 350V 35 140mA SOT-89 effect transistor (FET) that utilizes IXYS Integrated P Circuits Divisions proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance Features in an economical silicon gate process. Our vertical Low R at Cold Temperatures DS(on) DMOS process yields a robust device, with high input R 35 max. at 25C DS(on) impedance, for use in high power applications. The High Input Impedance CPC3730 is a highly reliable FET device that has High Breakdown Voltage: 350V P been used extensively in our solid state relays for Low V Voltage: -1.6 to -3.9V GS(off) industrial and telecommunications applications. Small Package Size: SOT-89 This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules. Applications The CPC3730 offers a low, 35 maximum, on-state Ignition Modules resistance at 25C. Normally-On Switches Solid State Relays The CPC3730 has a minimum breakdown voltage Converters of 350V , and is available in an SOT-89 package. P Telecommunications As with all MOS devices, the FET structure prevents Power Supply thermal runaway and thermal-induced secondary breakdown. Ordering Information Part Description CPC3730CTR N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) Package Pinout Circuit Symbol D D G G D S S (SOT-89) DS-CPC3730-R01 1 www.ixysic.comCPC3730 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in excess of Parameter Ratings Units these ratings can cause permanent damage to the device. Functional Drain-to-Source Voltage 350 V P operation of the device at conditions beyond those indicated in the Gate-to-Source Voltage 15 V P operational sections of this data sheet is not implied. Pulsed Drain Current 600 mA 1 Power Dissipation 1.4 W Typical values are characteristic of the device at +25C, and are the Junction Temperature +125 C result of engineering evaluations. They are provided for information pur- poses only, and are not part of the manufacturing testing requirements. Operational Temperature -55 to +125 C Storage Temperature -55 to +125 C 1 Mounted on FR4 board 1 x1 x0.062 Electrical Characteristics 25C (Unless Otherwise Noted) Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage V V = -5V, I =100A 350 - - V (BR)DSX GS D P Gate-to-Source Off Voltage V I = 5V, I =1mA -1.6 - -3.9 V GS(off) DS D Change in V with Temperatures dV /dT V = 5V, I =1A - - 4.5 mV/C GS(off) GS(off) DS D Gate Body Leakage Current I V =15V, V =0V - - 100 nA GSS GS DS V = -5V, V =350V - - 1 A GS DS Drain-to-Source Leakage Current I D(off) V = -5V, V =280V, T =125C - - 1 mA GS DS A Saturated Drain-to-Source Current I V = 0V, V =15V 140 - - mA DSS GS DS Static Drain-to-Source On-State Resistance R V = 0V, I =140mA -- 35 DS(on) GS D Change in R with Temperatures dR /dT V = 0V, I =140mA - - 1.1 %/C DS(on) DS(on) GS D Forward Transconductance G I = 100mA, V = 10V 150 - - m FS D DS Input Capacitance C 100 200 V = -5V ISS GS Common Source Output Capacitance C V = 25V - 20 100 pF OSS DS f= 1MHz Reverse Transfer Capacitance C 580 RSS Turn-On Delay Time t 20 V = 25V d(on) DD Rise Time t 10 I = 150mA r D - -ns Turn-Off Delay Time t V = 0V to -10V 20 d(off) GS R = 50 Fall time t 50 gen f Source-Drain Diode Voltage Drop V V = -5V, I = 150mA - 0.6 1.8 V SD GS SD Thermal Resistance (Junction to Ambient) R - - 90 - C/W JA Thermal Characteristics Thermal Impedance Symbol Rating Units Junction to ambient 90 C/W JA Junction to case 50 C/W JC V DD Switching Waveform & Test Circuit R L 0V 90% PULSE GENERATOR INPUT OUTPUT 10% -10V R gen t t on off t t t t d(on) f d(off) r D.U.T. V DS INPUT 90% 90% OUTPUT 10% 10% 0V 2 R01 www.ixysic.com