Product Information

IXBN75N170

IXBN75N170 electronic component of IXYS

Datasheet
IGBT Modules 145Amps 1700V

Manufacturer: IXYS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 112.697 ea
Line Total: USD 112.7

1 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 110.344
10 : USD 108.55

     
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RoHS - XON
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The IXBN75N170 is a high-voltage, high-density power integrated circuit module produced by IXYS Corporation. It is an N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) array, designed for use in power switching applications such as motor controls and uninterruptible power supplies. The part offers an on-state blocking voltage rating of 750 V DC, a maximum on-state drain current rating of 17 A, and a total gate charge at 10 V of 0.98 nC. It also features a maximum junction temperature rating of 175°C, and a maximum thermal resistance of 120°C/W.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CLR
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR

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