Product Information

QS8J13TR

QS8J13TR electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

115: USD 0.335 ea
Line Total: USD 38.53

2910 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 115  Multiples: 1
Pack Size: 1
Availability Price Quantity
2907 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

QS8J13TR
ROHM

1 : USD 0.7969
10 : USD 0.6958
100 : USD 0.4922
500 : USD 0.4232
1000 : USD 0.3588
3000 : USD 0.3347
6000 : USD 0.3266
9000 : USD 0.3163
24000 : USD 0.3128

2910 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 115
Multiples : 1

Stock Image

QS8J13TR
ROHM

115 : USD 0.335
200 : USD 0.3057

756 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 160
Multiples : 1

Stock Image

QS8J13TR
ROHM

160 : USD 0.6024

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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QS8J13 Datasheet -12V Pch+Pch Middle Power MOSFET llOutline TSMT8 V -12V DSS R (Max.) 22m DS(on) I 5.5A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TR Marking J13 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -12 V DSS *1 I Continuous drain current 5.5 A D *2 I Pulsed drain current 18 A D,pulse V Gate - Source voltage 0 -8 V GSS total 1.5 *3 Power dissipation P W D element 1.25 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2014 ROHM Co., Ltd. All rights reserved. 20140806 - Rev.001 QS8J13 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - 83.3 - *3 Thermal resistance, junction - ambient R /W thJA element - 100 - llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -12 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -5.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -12V, V = 0V - - -10 A DSS DS GS drain current Gate - Source I V = 0V, V = -8V - - -10 A GSS DS GS leakage current Gate threshold V V = -6V, I = -1mA -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.7 - V/ temperature coefficient T referenced to 25 j V = -4.5V, I = -5.5A - 15 22 GS D V = -2.5V, I = -2.7A - 19 28 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -2.7A - 24 38 GS D V = -1.5V, I = -1.1A - 29 58 GS D *4 g V = -6V, I = -5.5A Transconductance 8.5 - - S fs DS D *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Mounted on a ceramic board. *4 Pulsed www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2/11 20140806 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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