QS6Z5 Datasheet Complex Midium Power Transistors <For Tr1(NPN)> llOutline Parameter Value SOT-457T V 50V CEO SC-95 I 1A C <For Tr2(PNP)> TSMT6 Parameter Value V -50V CEO I -1A C llFeatures llInner circuit 1)Low saturation voltage. V =350mV(Max.)(I /I )=500mA/25mA) CE(sat) C B V =-400mV(Max.)(I /I )=-500mA/-25mA) CE(sat) C B 2)High speed switching llApplication Low frequency amplifier, High speed switching llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-457T QS6Z5 2928 TR 180 8 3000 Z05 (TSMT6) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(NPN) Tr2(PNP) Unit V Collector-base voltage 50 -50 V CBO Collector-emitter voltage V 50 -50 V CEO V Emitter-base voltage 6 -6 V EBO I 1 -1 A C Collector current *1 I 2 -2 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 1/9 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.QS6Z5 Datasheet llElectrical characteristics (T = 25C) <For Tr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = 100A 50 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 100A 6 - - V EBO E I Collector cut-off current V = 50V - - 1.0 A CBO CB I V = 4V Emitter cut-off current - - 1.0 A EBO EB *5 Collector-emitter saturation voltage V I = 500mA, I = 25mA - 130 350 mV CE(sat) C B h V = 2V, I = 50mA DC current gain 180 - 450 - FE CE C V = 10V, I = -200mA, CE E *5 Transition frequency f - 360 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz t Turn-On time - 40 - ns on I = 500mA,V 10V, C CC t Storage time I = 50mA,I = -50mA, - 410 - ns stg B1 B2 (See test circuit) t Fall time - 75 - ns f llElectrical characteristics (T = 25C) <For Tr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = -100A -50 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E I Collector cut-off current V = -50V - - -1.0 A CBO CB I Emitter cut-off current V = -4V - - -1.0 A EBO EB *5 Collector-emitter saturation voltage V I = -500mA, I = -25mA - -200 -400 mV CE(sat) C B h V = -2V, I = -50mA DC current gain 180 - 450 - FE CE C V = -10V, I = 200mA, CE E *5 Transition frequency f - 400 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz Turn-On time ton - 40 - ns I = -500mA,V -10V C CC Storage time tstg - 250 - ns I = -50mA,I = 50mA B1 B2 (See test circuit) Fall time tf - 35 - ns *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 Mounted on a 25mm25mm0.8mm ceramic board. *4 0.9W per element must not be exceeded. *5 Pulsed www.rohm.com 2/9 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.