Product Information

BUK9Y15-60E,115

BUK9Y15-60E,115 electronic component of Nexperia

Datasheet
MOSFET N-channel 60 V 15 mo FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0005 ea
Line Total: USD 1

1447 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1391 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.8162
10 : USD 0.808
25 : USD 0.6843
100 : USD 0.4738
250 : USD 0.4644
500 : USD 0.4644
1000 : USD 0.4644

1447 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.0005
10 : USD 0.8153
100 : USD 0.6509
500 : USD 0.5715
1000 : USD 0.5635
1500 : USD 0.452
3000 : USD 0.4255
9000 : USD 0.4255
24000 : USD 0.4255

1391 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 17
Multiples : 1
17 : USD 0.808
25 : USD 0.6843
100 : USD 0.4738
250 : USD 0.4644

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK9Y15-60E N-channel 60 V, 15 m logic level MOSFET in LFPAK56 16 March 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 60 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 53 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 95 W tot mb Static characteristics R drain-source on-state V = 5 V I = 15 A T = 25 C Fig. 11 - 12.1 15 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 15 A V = 48 V V = 5 V - 6 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9Y15-60E N-channel 60 V, 15 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y15-60E LFPAK56 Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y15-60E 91560E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 60 V DS j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage DC T 175 C -10 10 V GS j Pulsed T 175 C 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 95 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 53 A D GS mb V = 5 V T = 100 C Fig. 2 - 37.4 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 212 A DM p mb BUK9Y15-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 16 March 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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