Product Information

BUK9Y41-80E,115

BUK9Y41-80E,115 electronic component of Nexperia

Datasheet
MOSFET N-channel 80 V 45 mo FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7416 ea
Line Total: USD 0.74

46937 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2910 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.3185
3000 : USD 0.3185
4500 : USD 0.3185
7500 : USD 0.3185
15000 : USD 0.3185

46937 - WHS 2


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.7416
10 : USD 0.5944
100 : USD 0.4521
500 : USD 0.3904
1000 : USD 0.3286
1500 : USD 0.3168
3000 : USD 0.2907
9000 : USD 0.2883
24000 : USD 0.2883

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

BUK9Y41-80E N-channel 80 V, 45 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 24 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 64 W tot mb Static characteristics R drain-source on-state V = 5 V I = 5 A T = 25 C Fig. 11 - 35.7 45 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 5 A V = 64 V - 4.3 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9Y41-80E N-channel 80 V, 45 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y41-80E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y41-80E 94180E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage R = 20 k - 80 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j I drain current T = 25 C V = 5 V Fig. 1 - 24 A D mb GS T = 100 C V = 5 V Fig. 1 - 17 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 96 A DM mb p P total power dissipation T = 25 C Fig. 2 - 64 W tot mb BUK9Y41-80E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 8 May 2013 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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