Product Information

BUK9Y25-60E,115

BUK9Y25-60E,115 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET N-channel 60 V 25 mo FET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7866 ea
Line Total: USD 0.79

5065 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2827 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.7949
10 : USD 0.7883
25 : USD 0.7817
100 : USD 0.7751
250 : USD 0.7596
500 : USD 0.7596
1000 : USD 0.7596

2910 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 0.5182
10 : USD 0.5135
100 : USD 0.4096
500 : USD 0.4013
1000 : USD 0.3864
1500 : USD 0.3854
3000 : USD 0.3778
9000 : USD 0.3778
24000 : USD 0.3778

24735 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.4068

5065 - WHS 4


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.7866
10 : USD 0.7004
100 : USD 0.5325
500 : USD 0.4761
1000 : USD 0.4761
1500 : USD 0.3772
3000 : USD 0.3507
9000 : USD 0.3507
24000 : USD 0.3507

2910 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 22
Multiples : 1
22 : USD 0.5135
100 : USD 0.4096
500 : USD 0.4013
1000 : USD 0.3864
1500 : USD 0.3854
3000 : USD 0.3778

2827 - WHS 6


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 20
Multiples : 1
20 : USD 0.7883
25 : USD 0.7817
100 : USD 0.7751
250 : USD 0.7596

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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BUK9Y25-60E N-channel 60 V, 25 m logic level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current V = 5 V T = 25 C Fig. 1 - - 34 A D GS mb P total power dissipation T = 25 C Fig. 2 - - 65 W tot mb Static characteristics R drain-source on-state V = 5 V I = 10 A T = 25 C Fig. 11 - 20.8 25 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 10 A V = 48 V - 4.2 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9Y25-60E N-channel 60 V, 25 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y25-60E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y25-60E 92560E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j I drain current T = 25 C V = 5 V Fig. 1 - 34 A D mb GS T = 100 C V = 5 V Fig. 1 - 24 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 4 - 135 A DM mb p P total power dissipation T = 25 C Fig. 2 - 65 W tot mb BUK9Y25-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 7 May 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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