Product Information

BUK9Y19-100E,115

BUK9Y19-100E,115 electronic component of Nexperia

Datasheet
MOSFET 100V N-CH LOGIC LEVEL IN LFPA
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.265 ea
Line Total: USD 1.26

1653 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1303 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 1.0629
10 : USD 1.028
25 : USD 0.8884
100 : USD 0.6221
250 : USD 0.6096
500 : USD 0.6096
1000 : USD 0.6096

1653 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.265
10 : USD 1.0396
100 : USD 0.8361
500 : USD 0.7188
1000 : USD 0.6682
1500 : USD 0.6049
3000 : USD 0.5589
9000 : USD 0.5589

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

BUK9Y19-100E N-channel 100 V, 19 m logic level MOSFET in LFPAK56 7 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 100 V DS j I drain current V = 5 V T = 25 C Fig. 2 - - 56 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 167 W tot mb Static characteristics R drain-source on-state V = 5 V I = 15 A T = 25 C Fig. 11 - 14.6 19 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 15 A V = 80 V V = 5 V - 14.1 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK9Y19-100E N-channel 100 V, 19 m logic level MOSFET in LFPAK56 4. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 5. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y19-100E LFPAK56 Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56 Power-SO8) 4 leads 6. Marking Table 4. Marking codes Type number Marking code BUK9Y19-100E 91910E 7. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 100 V DS j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage DC T 175 C -10 10 V GS j Pulsed T 175 C 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 167 W tot mb I drain current V = 5 V T = 25 C Fig. 2 - 56 A D GS mb V = 5 V T = 100 C Fig. 2 - 40 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 226 A DM p mb BUK9Y19-100E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 7 November 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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