Product Information

BUK9Y19-75B,115

BUK9Y19-75B,115 electronic component of Nexperia

Datasheet
MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2814 ea
Line Total: USD 1.28

5123 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
27645 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.611
3000 : USD 0.611
4500 : USD 0.611
6000 : USD 0.611
7500 : USD 0.611

1395 - WHS 2


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.259
10 : USD 1.1421
30 : USD 1.0777
100 : USD 1.0052
500 : USD 0.9729
1500 : USD 0.9569

5123 - WHS 3


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.2814
10 : USD 1.0631
100 : USD 0.8389
500 : USD 0.7321
1000 : USD 0.6965
1500 : USD 0.6027
3000 : USD 0.5541
9000 : USD 0.5529
24000 : USD 0.5494

1346 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 1.131
5 : USD 1.04
17 : USD 0.975
25 : USD 0.91
100 : USD 0.897

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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BUK9Y19-75B N-channel TrenchMOS logic level FET Rev. 04 13 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids DC-to-DC converters Transmission control Engine management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --75 V DS j j voltage I drain current V =5V T =25C --48.2A D GS mb see Figure 1 see Figure 4 P total power T = 25 C see Figure 2 --106W tot mb dissipation Static characteristics R drain-source V =5V I =20A -15.919 m DSon GS D on-state T =25C see Figure 13 j resistance V =10V I =20A -14.718 m GS D T =25C jBUK9Y19-75B Nexperia N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =48.2 A V 75 V --121mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =20A -12 -nC GD GS D V =60 V T =25C DS j see Figure 14 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y19-75B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK9Y19-75B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 13 April 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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