Product Information

BUK9Y14-40B,115

BUK9Y14-40B,115 electronic component of Nexperia

Datasheet
N-Channel 40 V 56A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8061 ea
Line Total: USD 0.81

7083 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
7083 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.7866
10 : USD 0.5842
100 : USD 0.4784
500 : USD 0.4347
1000 : USD 0.4152
1500 : USD 0.3772
3000 : USD 0.3726
9000 : USD 0.3726
24000 : USD 0.3726

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Q101 compliant on-state resistance Suitable for logic level gate drive Suitable for thermally demanding sources environments due to 175 C rating 1.3 Applications Air bag Automotive ABS systems Automotive transmission control Diesel injection systems Fuel pump and injection Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C --40 V DS j j I drain current V =5V T =25 C --56 A D GS mb see Figure 4 and 1 P total power dissipation T =25 C see Figure 2 --85 W tot mb Dynamic characteristics Q gate-drain charge V =5V I =10A -9 -nC GD GS D V = 32 V see Figure 14 DS Static characteristics R drain-source on-state V =5V I =20A - 1214m DSon GS D resistance T =25 C see Figure 12 and j 13 Avalanche ruggedness E non-repetitive I =56A V 40 V --89 mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T =25 C unclamped j(init)Nexperia BUK9Y14-40B N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1, 2, 3 S source mb D 4 G gate mb D mounting base G connected to drain mbb076 S 1234 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y14-40B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C-40V DS j j V gate-source voltage 15 15 V GS I drain current T =25 C V = 5 V see Figure 4 and 1 -56 A D mb GS T = 100 C V = 5 V see Figure 1 -40 A mb GS I peak drain current T =25 C t 10 s pulsed see Figure 4 - 226 A DM mb p P total power dissipation T =25 C see Figure 2 -85 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Avalanche ruggedness E non-repetitive I =56A V 40 V R =50 V =5V -89 mJ DS(AL)S D sup GS GS drain-source avalanche T =25 C unclamped j(init) energy 1 2 E repetitive drain-source see Figure 3 --J DS(AL)R 3 avalanche energy Source-drain diode I source current T =25 C-56A S mb I peak source current t 10 s pulsed T =25 C - 226 A SM p mb 1 Single-pulse avalanche rating limited by maximum junction temperature of 175 C. 2 Repetitive avalanche rating limited by average junction temperature of 170 C. 3 Refer to application note AN10273 for further information. BUK9Y14-40B 3 Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 2 June 2008 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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