Product Information

BUK9Y153-100E

BUK9Y153-100E electronic component of Nexperia

Datasheet
MOSFET, N-CH, 100V, 9.4A, LFPAK
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8832 ea
Line Total: USD 0.88

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

BUK9Y153-100E
Nexperia

1 : USD 0.8135
10 : USD 0.7009
100 : USD 0.4781
500 : USD 0.3999
1000 : USD 0.3543
5000 : USD 0.3299

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
LoadingGif

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Additional Infomation About Product

BUK9Y153-100E N-channel 100 V, 153 m logic level MOSFET in LFPAK56 27 June 2014 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True logic level gate with V rating of greater than 0.5 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current V = 5 V T = 25 C Fig. 2 - - 9.4 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 37 W tot mb Static characteristics R drain-source on-state V = 5 V I = 2 A T = 25 C Fig. 11 - 122 153 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge V = 5 V I = 2 A V = 80 V - 3.1 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 j Scan or click this QR code to view the latest information for this product LFPAK56NXP Semiconductors BUK9Y153-100E N-channel 100 V, 153 m logic level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9Y153-100E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK9Y153-100E 915310E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage R = 20 k - 100 V DGR GS V gate-source voltage T 175 C DC -10 10 V GS j T 175 C Pulsed 1 2 -15 15 V j P total power dissipation T = 25 C Fig. 1 - 37 W tot mb I drain current T = 25 C V = 5 V Fig. 2 - 9.4 A D mb GS T = 100 C V = 5 V Fig. 2 - 6.6 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 38 A DM mb p BUK9Y153-100E All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 27 June 2014 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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