Product Information

MS1202

MS1202 electronic component of Microchip

Datasheet
RF Bipolar Transistors Comm/Bipolar Transistor
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 70.7677 ea
Line Total: USD 141.54

0 - Global Stock
MOQ: 2  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 2
Multiples : 1

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MS1202
Microchip

2 : USD 70.7677

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Additional Infomation About Product

MS1202 RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS Features 175 MHz 12.5 VOLTS P = 7.0 W OUT G = 8.4 dB MINIMUM P COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 136 MHz frequency band and 28 volt FM ground station applications. Gold metalization and emitter ballast resistors provide long term product ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Parameter Value Unit V Collector - Base Voltage 65 V CBO V Collector - Emitter Voltage 35 V CEO V Emitter - Base Voltage 4.0 V EBO P Device Dissipation 15 W DISS TJ Junction Temperature 200 C IC Device Current 1.0 A T Storage Temperature -65 to +200 STG C Thermal Data R Thermal Resistance Junction-case 11.7 C/W TH(J-C) Rev A January 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1202 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) STATIC Value Symbol Test Conditions Unit Min. Typ. Max. BV I = 200 mA V = 0 mA 65 --- --- V ces C BE BV I = 200 mA I =0 35 --- --- V ceo C B BV I = 5 mA I = 0 mA 4 --- --- V ebo E C I V = 30 V I = 0 mA --- --- 1.0 mA cbo CB E H V = 5 V I = 100 mA 5 --- 150 --- FE CE C DYNAMIC Value Symbol Test Conditions Unit Min. Typ. Max. P f =175 MHz V=28V 7.0 --- --- W OUT CE G f =175 MHz V=28V 8.4 --- --- dB P CE f =175 MHz V=28V 60 % c CE Cob f =1 MHz V=30V --- --- 15 pF CE Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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