Product Information

MS1406

MS1406 electronic component of Microchip

Datasheet
RF Bipolar Transistors Comm/Bipolar Transistor

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 69.9041 ea
Line Total: USD 139.81

0 - Global Stock
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 2
Multiples : 1

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MS1406
Microchip

2 : USD 69.9041

     
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140 COMMERCE DRIVE MONTGOMERYVILLE, PA - PHONE: (215) 631 - FAX: (215) 631 - MS1406 FeaturesFeatures 12.5 VOLTS Pout = 20WATTS DESCRIPTION:DESCRIPTION: 136 ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS V Collector - V CBO V Collector - V CEO V - V EBO I Continuous Collector Current A C P Total Dissipation W D Tj nction Temperature C T - STG C Thermal Data Thermal Data R Thermal Resistance Junction - case TH(J - C) notice, the specifications and information contained herein or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without C/W 5.8 65 to +200 Storage Temperature 200 Ju 30 3.0 4.0 Base Voltage Emitter 35 Emitter Voltage 65 Base Voltage Unit Value Parameter Symbol C) (Tcase = 25 reliability. gold metalization provide maximum ruggedness and ground station transmitters. Diffused emitter ballast and aviation band and for 28V FM Class C amplifiers used in MHz 12.5V AM Class C amplifiers operating in the 118 The MS1406 is a silicon NPN transistor designed for COMMON EMITTER CONFIGURATION Gp = 8.0 dB MINIMUM GOLD METALIZATION 175MHz FM MOBILE APPLICATIONS RF & MICROWAVE TRANSISTORS 9855 9840 1013 18936 MS1406 ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25C)C) STATICSTATIC Test Conditions Typ. I V --- --- V CES C BE I I --- --- V CEO C B V I I --- --- EBO C I V = 30 V I --- --- CBO CB E h FE V = 5 V I = 20 --- --- CE C DYNAMICDYNAMIC Test Conditions Typ. P P = 3.0W V = --- --- W IN CE dB G P = 3.0W V = --- --- P IN CE P = 3.0W V = --- --- % C IN CE C OB V = 30V f = 1 MHz --- --- pf CB IMPEDANCE DATAIMPEDANCE DATA FREQ Z ( )) Z ( )) IN CL 1.1 + j1.15 9.0 - P = 3.0W IN V CC notice, the specifications and information contained herein or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without =28V j9.60 175 MHz 35 60 28V f = 175MHz 8.2 28V f = 175MHz OUT 20 28V f = 175MHz Max. Min. Unit Symbol Value 200 10 0 mA mA 1.0 = 0 mA E 4.0 = 0 mA = 10 mA BV 35 = 0 mA = 200 mA BV 65 = 0 mA = 200 mA BV Max. Min. Unit Symbol Value

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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