X-On Electronics has gained recognition as a prominent supplier of MS2212 rf bipolar transistors across the USA, India, Europe, Australia, and various other global locations. MS2212 rf bipolar transistors are a product manufactured by Microchip. We provide cost-effective solutions for rf bipolar transistors, ensuring timely deliveries around the world.

MS2212

MS2212 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.MS2212
Manufacturer: Microchip
Category:RF Bipolar Transistors
Description: Trans RF BJT NPN 0.002A 4-Pin Case M-222
Datasheet: MS2212 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 325.4458 ea
Line Total: USD 325.45

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 325.4458

     
Manufacturer
Product Category
Transistor Polarity
Operating Frequency
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Mounting Style
Collector- Base Voltage Vcbo
Operating Temp Range
Pin Count
Number Of Elements
Operating Temperature Classification
Category
Rad Hardened
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We proudly offer the MS2212 RF Bipolar Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the MS2212 RF Bipolar Transistors.

140 COMMERCE DRIVE MONTGOMERYVILLE, PA - PHONE: (215) 631 - FAX: (215) 631 - MS2212 Features 960 - Pout = 15W DDESCRIPTION:ESCRIPTION: band performance. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS V - 32 V CC I 1.8 A C P 50 W T Junction Temperature +250 C J T Storage Temperature - 65 to + 200 C STG Thermal DataThermal Data R - 3.0 TH(j - c) on contained herein or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and informati * Applies only to rated RF operation. C/W Case Thermal Resistance* Junction DISS Power Dissipation* Device Current* Supply Voltage* Collector Unit Value Parameter Symbol C) (Tcase = 25 most rugged pulse conditions. provide superior reliability and consistent performance under the d metallization and emitter ballasting to The MS2212 utilizes gol pulse formats. Internal impedance matching provides superior broad as JTIDS, where maximum performance is required under a variety of The MS2212 is designed for specialized avionics applications, such COMMON BASE CONFIGURATION INFINITE VSWR CAPABILITY RATED CONDITIONS INTERNAL IMPEDANCE MATCHING Gp = 8.1 dB MINIMUM EMITTER SITE BALLASTED GOLD METALLIZATION 1215 MHz AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS 9855 9840 1013 18936 MS2212 ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25C)C) STATICSTATIC Test Conditions Typ. BV I = 10 mA I 55 V C BV I = 10 mA R = 55 V C B I I 3.5 V C I V = 28 V V = 0 V 2.0 B h V = 5 V I = 15 150 FE C DYNAMICDYNAMIC Test Conditions Typ. P f = 960 - 1215 MHz P = 2.3 W V = 28 V 15 W OUT IN CC f = 960 - 1215 MHz P = 2.3 W V = 28 V 45 49 % C IN CC G f = 960 - 1 215 MHz P = 2.3 W V = 28 V 8.1 8.9 P IN CC IMPEDANCE DATA:IMPEDANCE DATA: Zin Zcl 5.7 + j4.3 5.7 + j7.7 5.8 + j2.5 4.3 + j6.5 5.0 + j3.0 4.0 + j4.8 P = 2.3W V = 28V IN on contained herein or contact our factory direct. WWW.ADVANCEDPOWER.COM Visit our website at Advanced Power Technology reserves the right to change, without notice, the specifications and informati CC 1215 MHz 1090 MHz 960 MHz FREQUENCY Duty Cycle: Burst 49.2%, overall 20.8% Note: S off, repeat for 3.3 ms. S on 6.6 Pulse Format: 6.4 dB ---- ---- ---- ---- Max. Min. Unit Symbol Value CE ---- ---- 500mA E CE CES mA ---- ---- E EBO ---- ---- = 0 mA = 1 mA BV E CER ---- ---- 10 E CBO ---- ---- = 0 mA Max. Min. Unit Symbol Value

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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