Product Information

BFG410W,115

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Transistors RF Bipolar TAPE-7 TNS-RFSS

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1 Multiples : 1 BFG410W,115 NXP	1 : USD 0.117 5 : USD 0.1166 50 : USD 0.1136 500 : USD 0.1064 2500 : USD 0.1035	N/A Obsolete

0 - WHS 2 MOQ : 1 Multiples : 1 BFG410W,115 NXP	1 : USD 0.3354 10 : USD 0.255 100 : USD 0.1379 1000 : USD 0.1033 3000 : USD 0.0894 9000 : USD 0.0877 24000 : USD 0.0877 45000 : USD 0.0866 99000 : USD 0.0832	N/A Obsolete

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG410W NPN 22 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2 base Emitter is thermal lead 3emitter Low feedback capacitance. 4 collector APPLICATIONS RF front end Wideband applications, e.g. analog and digital cellular 3 4 handbook, halfpage telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers 21 Satellite television tuners (SATV) Top view MSB842 High frequency oscillators. DESCRIPTION Marking code: P4. NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 10 V CBO V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 10 12 mA C P total power dissipation T 110 C 54 mW tot s h DC current gain I =10mA V =2V T =25 C 5080120 FE C CE j C feedback capacitance I =0 V =2V f= 1MHz 45 fF re C CB f transition frequency I =10mA V =2V f= 2GHz T =25 C 22 GHz T C CE amb G maximum power gain I =10mA V =2V f= 2GHz T =25 C 21 dB max C CE amb F noise figure I =1mA V = 2 V f = 2 GHz = 1.2 dB C CE S opt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1998 Mar 11 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS - XON Y Y
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity Npn Npn
Operating Frequency 22000 MHz 22000 MHz
Collector- Emitter Voltage VCEO Max 4.5 V 4.5 V
Emitter- Base Voltage VEBO 1 V 1 V
Continuous Collector Current 0.012 A 0.012 A
Pd - Power Dissipation 54 mW 54 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 343 SOT - 343
Packaging Reel Reel
Configuration Single Single
Type Rf Bipolar Small Signal Rf Bipolar Small Signal
Brand Nxp Semiconductors Nxp Semiconductors
Maximum Dc Collector Current 0.012 A 0.012 A
Factory Pack Quantity : 3000 3000
Collector- Base Voltage Vcbo 10 V 10 V
Dc Current Gain Hfe Max 50 50
Height 1 mm 1 mm
Length 2.2 mm 2.2 mm
Width 1.35 mm 1.35 mm
Cnhts 8541290000 8541290000
Gain Bandwidth Product Ft 22000 Mhz 22000 Mhz
Hts Code 8541210075 8541210075
Mxhts 85412101 85412101
Product Type Rf Bipolar Transistors Rf Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541210000 8541210000