Product Information

BFM505,115

BFM505,115 electronic component of NXP

Datasheet
RF Bipolar Transistors TAPE-7 TNS-RFSS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.3276 ea
Line Total: USD 982.8

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 3000
Multiples : 1
3000 : USD 0.3276

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFM505 Dual NPN wideband transistor Product specification 1996 Oct 08 Supersedes data of 1995 Sep 04NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 FEATURES PINNING - SOT363A Small size PIN SYMBOL DESCRIPTION Temperature and h matched FE 1b base 1 1 Low noise and high gain 2e emitter 1 1 High gain at low current and low capacitance at low 3c collector 2 2 voltage 4b base 2 2 Gold metallization ensures excellent reliability. 5e emitter 2 2 6c collector 1 1 APPLICATIONS Oscillator and buffer amplifiers 645 Balanced amplifiers handbook, halfpage c c 1 2 LNA/mixer. b b 1 2 DESCRIPTION e e 1 2 Dual transistor with two silicon NPN RF dies in a surface 1 2 3 mount, 6-pin SOT363 (S-mini) package. The transistors Top view MAM210 are primarily intended for wideband applications in the Marking code: N0. GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and Fig.1 Simplified outline and symbol. satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Any single transistor C feedback capacitance I =0 V =3V f= 1MHz 0.22 pF re e CB f transition frequency I =5mA V =3V f = 1GHz 9 GHz T C CE 2 insertion power gain I =5mA V = 3 V f = 900 MHz 14 15 dB C CE s 21 T =25 C amb G maximum unilateral power gain I =5mA V = 3 V f = 900 MHz 17 dB UM C CE T =25 C amb F noise figure I =1mA V = 3 V f = 900 MHz 1.1 1.6 dB C CE = S opt R thermal resistance from junction single loaded 230 K/W th j-s to soldering point double loaded 115 K/W 1996 Oct 08 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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