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BFG480W,115

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RF Bipolar Transistors NPN 4.5V 21GHZ

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.3925 ea
Line Total: USD 1177.5

0 - Global Stock

MOQ: 3000 Multiples: 3000
Pack Size: 3000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 21 May to Mon. 27 May MOQ : 3000 Multiples : 3000 BFG480W,115 NXP	3000 : USD 0.3925

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification 1998 Oct 21 Supersedes data of 1998 Jul 09NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1emitter Low noise figure 2base High transition frequency 3emitter Emitter is thermal lead 4 collector Low feedback capacitance Linear and non-linear operation. 3 4 handbook, halfpage APPLICATIONS RF front end with high linearity system demands (CDMA) 21 Common emitter class AB driver. Top view MSB842 DESCRIPTION Marking code: P6. NPN double polysilicon wideband transistor with buried Fig.1 Simplified outline SOT343R. layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-emitter voltage open base 4.5 V CEO I collector current (DC) 80 250 mA C P total power dissipation T 60 C 360 mW tot s f transition frequency I =80mA V = 2 V f = 2 GHz T =25 C21 GHz T C CE amb G maximum gain I =80mA V = 2 V f = 2 GHz T =25 C16 dB max C CE amb F noise figure I =8mA V = 2 V f = 2 GHz = 1.8 dB C CE S opt power gain Pulsed class-AB <1 :2 t =5 ms 13.5 dB G p p V = 3.6 V f = 2 GHz P =100 mW CE L collector efficiency Pulsed class-AB <1 :2 t =5 ms 45 % C p V = 3.6 V f = 2 GHz P =100 mW CE L CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 1998 Oct 21 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category RF Bipolar Transistors RF Bipolar Transistors
RoHS - XON Y Y
Transistor Type Bipolar Bipolar
Technology Si Si
Transistor Polarity Npn Npn
Operating Frequency 23000 MHz 23000 MHz
Collector- Emitter Voltage VCEO Max 4.5 V 4.5 V
Emitter- Base Voltage VEBO 1 V 1 V
Continuous Collector Current 0.25 A 0.25 A
Pd - Power Dissipation 360 mW 360 mW
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case SOT - 343 SOT - 343
Packaging Reel Reel
Configuration Single Single
Brand Nxp Semiconductors Nxp Semiconductors
Maximum Dc Collector Current 0.25 A 0.25 A
Factory Pack Quantity : 3000 3000