Product Information

BFG97,115

BFG97,115 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN 15V 5.5GHZ
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7254 ea
Line Total: USD 0.73

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.7254
10 : USD 0.7195
100 : USD 0.6961
250 : USD 0.6728

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 DESCRIPTION PINNING age 4 NPN planar epitaxial transistor PIN DESCRIPTION mounted in a plastic SOT223 1emitter envelope. 2 base It features excellent output voltage capabilities, and is primarily intended 3emitter for use in MATV applications. 4 collector PNP complement is the BFG31. 123 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO I DC collector current 100 mA C P total power dissipation up to T =125 C (note 1) 1W tot s h DC current gain I =70 mA V =10 V T =25 C25 80 FE C CE j f transition frequency I =70 mA V =10 V 5.5 GHz T C CE f = 500 MHz T =25 C amb G maximum unilateral power gain I =70 mA V =10 V 16 dB UM C CE f = 500 MHz T =25 C amb I =70 mA V =10 V 12 dB C CE f = 800 MHz T =25 C amb V output voltage I =70 mA V =10 V 700 mV o C CE d 60 dB R =75 im = L f =793.25 MHz T =25 C (p q r) amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 3V EBO I DC collector current 100 mA C P total power dissipation up to T =125 C (note 1) 1W tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s September 1995 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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