MS1649

MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features 470 MHz P = 3W OUT G = 9.5dB MINIMUM P 1. Collector 2. Base COMMON EMITTER CONFIGURATION 3. Emitter DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor designed primarily for UHF communications. This device is packaged in a grounded emitter TO-39 package for increased power gain and optimum heat dissipation. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Parameter Value Unit V Collector-Base Voltage 36 V CBO V Collector-Emitter Voltage 16 V CEO V Emitter-Base Voltage 3.5 V EBO I Collector Current 1.0 A C P Total Power Dissipation 7.8 W TOT T Storage Temperature -65 to +200 C STG T Junction Temperature +200 C J Thermal Data R Thermal Resistance Junction-Case 35.0 C/W T H(J-C) Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A: 09/16/05MS1649 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BV I = 50mA V = 0 36 --- --- V CES C BE BV I = 50mA I = 0 16 --- --- V CEO C B BV I = 1mA I = 0 3.5 --- --- V EBO E C I V = 12.5V V = 0 --- --- 1.0 mA CES CB BE H V = 5.0V I =100mA 20 --- 150 --- FE CE C DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit G f = 470MHz P = 3.0W V = 12.5V 9.5 --- --- dB PE OUT CC f = 470MHz P = 3.0W V = 12.5V 50 --- --- % OUT CC C f = 1.0MHz V = 12.5 V --- --- 12 pf OB CB IMPEDANCE DATA FREQ Z () Z () IN CL 175 MHz 3.5 + j1.2 14.0 + j10.0 470 MHz 3.3 + j3.2 11.0 + j5.7 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A: 09/16/05