Product Information

STBV32-AP

STBV32-AP electronic component of STMicroelectronics

Datasheet
RF Bipolar Transistors IGBT & Power Bipolar
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1

MOQ : 1
Multiples : 1

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STBV32-AP
STMicroelectronics

1 : USD 0.7686
10 : USD 0.5601
100 : USD 0.3493
500 : USD 0.239
1000 : USD 0.1839
N/A

Obsolete
0 - Warehouse 2


Multiples : 1

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STBV32-AP
STMicroelectronics

N/A

Obsolete
0 - Warehouse 3

MOQ : 12000
Multiples : 12000

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STBV32-AP
STMicroelectronics

12000 : USD 0.0864
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Series
Transistor Type
Technology
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Additional Infomation About Product

STBV32 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications Compact fluorescent lamps (CFLS) TO-92 TO-92AP SMPS for battery charger Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32G and STBV32G-AP are supplied using halogen-free molding compound. Table 1. Device summary Order codes Marking Package Packaging STBV32 BV32 TO-92 Bulk STBV32G BV32G TO-92 Bulk STBV32-AP BV32 TO-92AP Ammopack STBV32G-AP BV32G TO-92AP Ammopack July 2008 Rev 8 1/11 www.st.com 11Electrical ratings STBV32 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Collector-base voltage (I = 0, I = 0.5A, t < 10 ms) V V EBO C B P (BR)EBO Collector current I 1.5 A C (f 100 Hz, duty-cycle 50%, T = 25 C) C I Collector peak current (t < 5 ms) 3 A CM P I Base current 0.5 A B I Base peak current (t < 5 ms) 1.5 A BM P P Total dissipation at T = 25 C 1.5 W TOT c T Storage temperature -65 to 150 stg C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 83.3 C/W thj-case 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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