SM5S12ATHE3/I

SM5S10AT thru SM5S43AT www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Junction passivation optimized design passivated anisotropic rectifier technology T = 175 C capability suitable for high reliability J and automotive requirement Available in uni-directional polarity only Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge specification (varied by test condition) DO-218 Compatible Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 10 V to 43 V WM TYPICAL APPLICATIONS V 11.1 V to 52.8 V BR Use in sensitive electronics protection against voltage P (10 x 1000 s) 3600 W PPM transients induced by inductive load switching and lighting, P (10 x 10 000 s) 2800 W PPM especially for automotive load dump protection application. P 5 W D I 500 A FSM MECHANICAL DATA T max. 175 C J Case: DO-218AC Polarity Uni-directional Molding compound meets UL 94 V-0 flammability rating Package DO-218AC Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT with 10/1000 s waveform 3600 Peak pulse power dissipation P W PPM with 10/10 000 s waveform 2800 Power dissipation on infinite heatsink at T = 25 C (fig. 1) P 5.0 W C D (1) Peak pulse current with 10/1000 s waveform I See next table A PPM Peak forward surge current 8.3 ms single half sine-wave I 500 A FSM Operating junction and storage temperature range T , T -55 to +175 C J STG Note (1) Non-repetitive current pulse at T = 25 C A Revision: 03-Dec-2018 Document Number: 87609 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SM5S10AT thru SM5S43AT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN TYPICAL MAXIMUM MAX. PEAK MAXIMUM MAXIMUM VOLTAGE TEMP. TEST STAND-OFF REVERSE PULSE REVERSE CLAMPING V (V) BR DEVICE CURRENT VOLTAGE LEAKAGE CURRENT COEFFICIENT LEAKAGE VOLTAGE (1) TYPE I V AT V AT 10/1000 s OF V T WM WM BR AT V AT I WM PPM (mA) (V) T = 175 C WAVEFORM J T MIN. NOM. MAX. I (A) V (V) D C I (A) (A) D (%/C) SM5S10AT 11.1 11.7 12.3 5.0 10.0 15 250 212 17.0 0.069 SM5S11AT 12.2 12.9 13.5 5.0 11.0 10 150 198 18.2 0.072 SM5S12AT 13.3 14.0 14.7 5.0 12.0 10 150 181 19.9 0.074 SM5S13AT 14.4 15.2 15.9 5.0 13.0 10 150 167 21.5 0.076 SM5S14AT 15.6 16.4 17.2 5.0 14.0 10 150 155 23.2 0.078 SM5S15AT 16.7 17.6 18.5 5.0 15.0 10 150 148 24.4 0.080 SM5S16AT 17.8 18.8 19.7 5.0 16.0 10 150 138 26.0 0.081 SM5S17AT 18.9 19.9 20.9 5.0 17.0 10 150 130 27.6 0.082 SM5S18AT 20.0 21.1 22.1 5.0 18.0 10 150 123 29.2 0.083 SM5S20AT 22.2 23.4 24.5 5.0 20.0 10 150 111 32.4 0.085 SM5S22AT 24.4 25.7 26.9 5.0 22.0 10 150 101 35.5 0.086 SM5S24AT 26.7 28.1 29.5 5.0 24.0 10 150 93 38.9 0.087 SM5S26AT 28.9 30.4 31.9 5.0 26.0 10 150 86 42.1 0.088 SM5S28AT 31.1 32.8 34.4 5.0 28.0 10 150 79 45.4 0.089 SM5S30AT 33.3 35.1 36.8 5.0 30.0 10 150 74 48.4 0.090 SM5S33AT 36.7 38.7 40.6 5.0 33.0 10 150 68 53.3 0.091 SM5S36AT 40.0 42.1 44.2 5.0 36.0 10 150 62 58.1 0.091 SM5S40AT 44.4 46.8 49.1 5.0 40.0 10 150 56 64.5 0.092 SM5S43AT 47.8 50.3 52.8 5.0 43.0 10 150 52 69.4 0.093 Notes For all types maximum V = 2.0 V at I = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses F F per minute maximum (1) To calculate V vs. junction temperature, use the following formula: V at T = V at 25 C x (1 + T x (T - 25)) BR BR J BR J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case R 1.0 C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 13 diameter plastic tape and reel, (1) SM5S10ATHE3/I 2.505 I 750 anode towards the sprocket hole Note (1) AEC-Q101 qualified Revision: 03-Dec-2018 Document Number: 87609 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000