Product Information

UJN1208K

UJN1208K electronic component of UnitedSiC

Datasheet
JFET 1200V/80mOhm SiC JFET, N-ON, TO-247

Manufacturer: UnitedSiC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 30
Multiples : 30

Stock Image

UJN1208K
UnitedSiC

30 : USD 20.8985
50 : USD 20.8985
100 : USD 20.2235
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

UJN1208K
UnitedSiC

1 : USD 19.0103
2 : USD 17.9012
N/A

Obsolete
     
Manufacturer
Product Category
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Type
Brand
Drain-Source Current At Vgs 0
Cnhts
Hts Code
Maximum Drain Gate Voltage
Mxhts
Factory Pack Quantity :
Taric
LoadingGif

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UJN1208K is a silicon carbide 1200V, 8A, two-channel circuit protection device manufactured by UnitedSiC. It is designed to provide fast and reliable circuit protection in an ultra-small package with an integrated switching FET. The device integrates both over-current and over-temperature protection while managing the current sharing between the two FETs. The device is designed to reduce costs and space requirements in various automotive and industrial applications, such as power converters, regenerative braking systems, motor drives, and renewable energy applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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