Product Information

UF3C065030K4S

Name: UF3C065030K4S
Brand: UnitedSiC
SKU: UF3C065030K4S_UnitedSiC
Availability: OutOfStock
Rating: 5 (11 reviews)

UF3C065030K4S electronic component of UnitedSiC

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Datasheet

MOSFET 650V/30mOhm, SiC, FAST CASCODE, G3, TO-247-4L, REDUCED Rth

Manufacturer: UnitedSiC

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 70.343 ea
Line Total: USD 70.34

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 21 May to Thu. 23 May MOQ : 1 Multiples : 1 UF3C065030K4S UnitedSiC	1 : USD 21.458 10 : USD 19.7285 30 : USD 18.9103

0 - WHS 2 Ships to you between Wed. 15 May to Tue. 21 May MOQ : 1 Multiples : 1 UF3C065030K4S UnitedSiC	1 : USD 69.381 3 : USD 69.147 5 : USD 66.716

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Additional Infomation About Product

UF3C065030K4S is a high voltage power module from UnitedSiC. It is a 3-phase, 600V IGBT driver, featuring SIC MOSFETs with a maximum output current of 30A. It also includes high frequency (<35kHz) PWM gate drive and integrated gate resistors. This module is capable of operating up to 650V, making it ideal for high voltage applications. It is RoHS compliant and has an operating temperature range of -40°C to +85°C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unitedsic may also be referenced as

UnitedSiC

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Manufacturer UnitedSiC UnitedSiC
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 85 A 85 A
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Rds On - Drain-Source Resistance 35 mOhms 35 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 4 V 4 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 441 W 441 W
Mounting Style Through Hole Through Hole
Package / Case TO - 247 - 4 TO - 247 - 4
Packaging Tube Tube
Technology Sic Sic
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 25 V 25 V
Qg - Gate Charge 51 nC 51 nC
Channel Mode Enhancement Enhancement
Qualification Aec - Q101 Aec - Q101
Configuration Single Single
Series Uf3 C Uf3 C
Transistor Type 1 N - Channel 1 N - Channel
Brand Unitedsic Unitedsic
Fall Time 12 ns 12 ns
Product Type Mosfet Mosfet
Rise Time 31 ns 31 ns
Factory Pack Quantity : 30 30
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 48 ns 48 ns
Typical Turn-On Delay Time 25 ns 25 ns