Product Information

TPH14006NH,L1Q

TPH14006NH,L1Q electronic component of Toshiba

Datasheet
N-Channel 60 V 14A (Ta) 1.6W (Ta), 32W (Tc) Surface Mount 8-SOP Advance (5x5)
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.5245 ea
Line Total: USD 2622.5

4850 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 5000  Multiples: 5000
Pack Size: 5000

 More Buying Options & Price Grid(s)

Availability Price Quantity
4850 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5000
Multiples : 5000
5000 : USD 0.5084
10000 : USD 0.4998
20000 : USD 0.4912
30000 : USD 0.4826
40000 : USD 0.474

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

TPH14006NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH14006NHTPH14006NHTPH14006NHTPH14006NH 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators Motor Drivers DC-DC Converters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: Q = 6.3 nC (typ.) SW (4) Low drain-source on-resistance: R = 11 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (6) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.2 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 34 A D Drain current (DC) (Note 1) I 14 D Drain current (pulsed) (t = 1 ms) (Note 1) I 42 DP Power dissipation (T = 25) P 32 W c D Power dissipation (t = 10 s) (Note 3) P 2.8 W D Power dissipation (t = 10 s) (Note 4) P 1.6 W D Single-pulse avalanche energy (Note 5) E 53 mJ AS Avalanche current I 14 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2011-11 2014-01-07 1 Rev.4.0TPH14006NH 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25) R 3.91 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 44.6 /W th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 78.1 /W th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 24 V, T = 25 (initial), L = 0.38 mH, R = 1 , I = 14 A DD ch G AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-01-07 2 Rev.4.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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