Product Information

TPH4R003NL,L1Q

TPH4R003NL,L1Q electronic component of Toshiba

Datasheet
N-Channel 30 V 40A (Tc) 1.6W (Ta), 36W (Tc) Surface Mount 8-SOP Advance (5x5)
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.199 ea
Line Total: USD 2.2

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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MOQ : 5000
Multiples : 5000
5000 : USD 0.7058

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Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 5000
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5000 : USD 0.5585
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10 : USD 1.1898
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2000 : USD 0.5644

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Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.3799
10 : USD 1.1898
100 : USD 0.9272
500 : USD 0.766
1000 : USD 0.6048
2000 : USD 0.5644

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Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
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1 : USD 2.199
10 : USD 1.051
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500 : USD 0.555
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5000 : USD 0.479
10000 : USD 0.4568
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Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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Additional Infomation About Product

TPH4R003NL MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R003NLTPH4R003NLTPH4R003NLTPH4R003NL 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High-speed switching (2) Small gate charge: Q = 3.9 nC (typ.) SW (3) Low drain-source on-resistance: R = 4.9 m (typ.) (V = 4.5 V) DS(ON) GS (4) Low leakage current: I = 10 A (max) (V = 30 V) DSS DS (5) Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.2 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance Start of commercial production 2013-08 2019 2019-10-30 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TPH4R003NL 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 68 A D Drain current (DC) (T = 25 ) (Note 1) I 40 c D Drain current (pulsed) (t = 1 ms) (Note 1) I 177 DP Power dissipation (T = 25 ) P 36 W c D Power dissipation (t = 10 s) (Note 3) P 2.8 D Power dissipation (t = 10 s) (Note 4) P 1.6 D Single-pulse avalanche energy (Note 5) E 62 mJ AS Avalanche current I 40 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. 5. Thermal CharacteristicsThermal Characteristics 5. 5. Thermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 3.47 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 44.6 th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 78.1 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Package limit is 60 A. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 24 V, T = 25 (initial), L = 30 H, I = 40 A DD ch AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2019 2019-10-30 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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