Product Information

TPH1R712MD,L1Q

TPH1R712MD,L1Q electronic component of Toshiba

Datasheet
P-Channel 20 V 60A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5)
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.6818 ea
Line Total: USD 3409

24250 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 5000  Multiples: 5000
Pack Size: 5000

 More Buying Options & Price Grid(s)

Availability Price Quantity
24250 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5000
Multiples : 5000
5000 : USD 0.6609
10000 : USD 0.6497
20000 : USD 0.6386
30000 : USD 0.6274
40000 : USD 0.6163

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

TPH1R712MD MOSFETs Silicon P-Channel MOS (U-MOS) TPH1R712MDTPH1R712MDTPH1R712MDTPH1R712MD 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Lithium-Ion Secondary Batteries Power Management Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low drain-source on-resistance: R = 1.35 m (typ.) (V = -4.5 V) DS(ON) GS (2) Low leakage current: I = -10 A (max) (V = -20 V) DSS DS (3) Enhancement mode: V = -0.5 to -1.2 V (V = -10 V, I = -1.0 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 12 GSS Drain current (DC) (T = 25 ) (Note 1) I -60 A c D Drain current (pulsed) (t = 1 ms) (Note 1) I -200 DP Power dissipation (T = 25 ) P 78 W c D Power dissipation (t = 10 s) (Note 2) P 2.8 D Power dissipation (t = 10 s) (Note 3) P 1.6 D Single-pulse avalanche energy (Note 4) E 468 mJ AS Single-pulse avalanche current I -60 A AS Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2014-03 2019 2019-10-30 1 Toshiba Electronic Devices & Storage Corporation Rev.5.0TPH1R712MD 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 1.60 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 2) R 44.6 th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 78.1 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: V = -16 V, T = 25 (initial), L = 100 H, I = -60 A DD ch AS Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2019 2019-10-30 2 Toshiba Electronic Devices & Storage Corporation Rev.5.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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